Abstract:
Active gate driving of power devices, where the gate driving current is dynamically controlled during the turn-on/off transients, is a promising technology to solve the conventional trade-off between the switching loss and the switching noise / EMI of power devices. Digital gate drivers are useful for the active gate driving, because the gate driving current is programmable and can be automatically optimized using a software. In order to shift the business of power electronics systems such as power converters using power devices from a sell-out type to a subscription type that provides the best service for each user, digital gate ICs that drive and sense power devices and are connected to the network will be a key technology. This talk shows several examples of the development of digital gate ICs using 180-nm BCD process for IGBTs, SiC MOSFETs, and GaN FETs that integrate a sensor, a controller, and a digital gate driver to digitally control gate current in fine time steps on a single chip.
Biography:
Makoto Takamiya received the B.S., M.S., and Ph.D. degrees in electronic engineering from the University of Tokyo, Japan, in 1995, 1997, and 2000, respectively. In 2000, he joined NEC Corporation, Japan, where he was engaged in the circuit design of high speed digital LSI’s. He joined University of Tokyo, Japan in 2005, where he is now a Professor of Institute of Industrial Science. From 2013 to 2014, he stayed at University of California, Berkeley as a visiting scholar. His research interests include the digital gate driver and sensor ICs for power electronics and the integrated power management circuits for automotive and industrial applications. He is an elected member of administrative committee in IEEE Solid-State Circuits Society from 2023 to 2025. He is a member of the technical program committee of IEEE Symposium on VLSI Technology and Circuits, IEEE Asian Solid-State Circuits Conference, and IEEE International Symposium on Power Semiconductor Devices and ICs. He formerly served on the technical program committees of IEEE International Solid-State Circuits Conference (ISSCC) from 2015 to 2020 and IEEE Custom Integrated Circuits Conference from 2006 to 2011. He was a Far East Regional Chair in ISSCC 2020. He was a Distinguished Lecturer of IEEE Solid-State Circuits Society from 2019 to 2020. He received 2009 and 2010 IEEE Paul Rappaport Awards and the best paper award in 2013 IEEE Wireless Power Transfer Conference.